Google
×
outi reentilä from books.google.com
... Outi REENTILÄ , Marco MATTILA and Harri LIPSANEN Optoelectronics Laboratory , Micronova , Helsinki University of Technology , P.O. Box 3500 , FIN - 02015 HUT , Finland ( Received September 30 , 2005 ; accepted October 28 , 2005 ...
outi reentilä from books.google.com
This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of ...
outi reentilä from books.google.com
In Interconnect-centric Design for Advanced SoC and NoC, we have tried to create a comprehensive understanding about on-chip interconnect characteristics, design methodologies, layered views on different abstraction levels and finally about ...
outi reentilä from books.google.com
This book summarizes the state of the art of these efforts and discusses the major issues from the physical integration to architecture to operating systems and application interfaces.
outi reentilä from books.google.com
The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials.
outi reentilä from books.google.com
This book will be an ideal source of the latest developments in mobile multimedia broadband technologies for researchers, R&D engineers, graduates and engineers in industry implementing simulation models and conducting measurements.
outi reentilä from books.google.com
In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons.
outi reentilä from books.google.com
The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research.
outi reentilä from books.google.com
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant ...